2N7002L(2005) 查看數據表（PDF） - Unisonic Technologies

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2N7002L
(Rev.:2005)

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Unisonic Technologies 

2N7002

ABSOLUTE MAXIMUM RATINGS (Ta=25°C unless otherwise noted.)

PARAMETER

Drain-Source Voltage

Drain-Gate Voltage (RGS ≤1MΩ)

Gate Source Voltage Continuous

Non Repetitive(tp<50µs)

Maximum Drain

Continuous

Current

Pulsed

Maximum Power Dissipation

Derated above 25°C

Operating Temperature

Storage Temperature

SYMBOL

VDSS

VDGR

VGSS

ID

PD

TOPR

TSTG

RATINGS

60

60

±20

±40

115

800

200

1.6

0 ~ +70

-40 ~ +150

MOSFET

UNIT

V

V

V

mA

mW

mW/°C

°C

THERMAL CHARACTERISTICS

PARAMETER

Thermal Resistance, Junction to Ambient

SYMBOL

θJA

RATINGS

625

UNIT

°C/W

ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified.)

PARAMETER

SYMBOL TEST CONDITIONS

MIN

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS VGS=0V, ID=10µA

60

Zero Gate Voltage Drain Current

IDSS

VDS=60V, VGS =0V

TJ=125°C

Gate-Body leakage, Forward

IGSSF VGS =20V, VDS=0V

Gate-Body leakage Reverse

IGSSR VGS =-20V, VDS=0V

ON CHARACTERISTICS (Note)

Gate Threshold Voltage

VGS (th) VGS = VDS, ID=250µA

1

Drain-Source On-Voltage

VDS (ON)

VGS = 10V, ID=500mA

VGS = 5.0V, ID=50mA

On-State Drain Current

ID(ON) VGS=10V,VDS≥2VDS(ON)

500

Static Drain-Source On-Resistance

RDS (ON)

VGS =10V, ID=500mA

TJ=100°C

VGS =5.0V, ID=50mA

TJ=100°C

Forward Transconductance

gFS

VDS≥2VDS(ON), ID=200mA

80

DYNAMIC CHARACTERISTICS

Input Capacitance

Ciss VDS=25V,VGS=0V,f=1.0MHz

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Turn-On Time

VDD=30V, RL=150Ω

tON

ID=200mA, VGS =10V

RGEN =25Ω

Turn-Off Time

VDD=30V, RL=25Ω

tOFF ID=200mA, VGS=10V

RGEN =25Ω

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

Drain-Source Diode Forward Voltage

VSD VGS=0V, Is=115mA (Note )

Maximum Pulsed Drain-Source Diode

Forward Current

ISM

Maximum Continuous Drain-Source

Is

Diode Forward Current

Note: Pulse Test: Pulse Width≤300µs, Duty Cycle≤2.0%

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

TYP

2.1

0.6

0.09

2700

1.2

1.7

1.7

2.4

320

20

11

4

0.88

MAX UNIT

V

0.5 mA

1

µA

100 nA

-100 nA

2.5 V

3.75

V

1.5

mA

7.5

13.5 Ω

7.5

13.5

mS

50 pF

25 pF

5

pF

20 nS

20 nS

1.5 V

0.8 A

115 mA

2

QW-R206-037,B

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