2N7002G 查看數據表（PDF） - Unisonic Technologies

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2N7002G

0.3A, 60V N-CHANNEL POWER MOSFET

Unisonic Technologies 

2N7002

TYPICAL CHARACTERICS (cont.)

1.1

1.075

1.05

ID = 250μA

1.025

1

0.975

0.95

0.925

-50 -25 0

25 50 75 100 125 150

JUCTION TEMPERATURE, TJ (°C)

Figure 9. Breakdown Voltage Varisation

with Temperature

60

40

Ciss

20

Coss

10

5

Crss

2 VGS=0V

f=1MHz

1

1

2 35

10 20 30 50

DRAIN TO SOURCE VOLTAGE, VDS (V)

Figure 11. Capacitance Characteristics

3

2

1

0. 5

RRDDSS((OONN))LLimimit it

0.1

0. 05

0. 01

0. 005

VGS=0V

SINGLE PULSE

TA=25℃

1

2

5

100μs

1ms

10ms

DC 101ss

10 20 30 60 80

DRAIN TO SOURCE VOLTAGE, VDS (V)

Figure 13. Maximum Safe Operating Area

MOSFET

2

1 VGS=0V

0.5

TJ =125℃

0.1

0.05

25℃

0.01

0.005

0.001

0.2 0.4

0.6

0.8

1 1.2 1.4

BODY DIODE FORWARD VOLTAGE , VSD (V)

Figure 10. Body Diode Forward Voltage Varisation

with Temperature

10

VDS = 25V

8

6

ID = 500mA

4

280mA

2

115 mA

0

0

0.4

0.8

1.2

1.6

2

GATE CHARGE, Qg (nC)

Figure 12. Gate Charge Characteristics

1

0.5 D=0.5

0.2 0.2

0.1 0.1

0.05 0.05

0.02

0.01

0.01

Single Pulse

0.002

0.001

0.0001 0.001 0.01

RθJA (t)=r (t)×RθJA

RθJA =(See Datasheet)

P (pk)

t1

t2

TJ×TA=P×RθJA (t)

Duty Cycle, D=t1/t2

0.1

1

10 100300

t1, TIME (sec)

Figure 14. Transient Thermal Response Curve

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

5

QW-R206-037,B

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