2N7053_D74Z 查看數據表（PDF） - Fairchild Semiconductor

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2N7053_D74Z

NPN Darlington Transistor

Fairchild Semiconductor 

NPN Darlington Transistor

(continued)

Electrical Characteristics

Symbol

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Max Units

OFF CHARACTERISTICS

V(BR)CEO

Collector-Emitter Breakdown Voltage*

V(BR)CBO

Collector-Base Breakdown Voltage

V(BR)EBO

Emitter-Base Breakdown Voltage

ICBO

Collector-Cutoff Current

ICES

Collector-Cutoff Current

IEBO

Emitter-Cutoff Current

IC = 1.0 mA, IB = 0

IC = 100 µA, IE = 0

IE = 1.0 mA, IC = 0

VCB = 80 V, IE = 0

VCE = 80 V, IE = 0

VEB = 7.0 V, IC = 0

100

V

100

V

12

V

0.1

µA

0.2

µA

0.1

µA

ON CHARACTERISTICS*

hFE

DC Current Gain

VCE(sat)

VBE(on)

Collector-Emitter Saturation Voltage

Base-Emitter On Voltage

IC = 100 mA, VCE = 5.0 V

IC = 1.0 A, VCE = 5.0 V

IC = 100 mA, IB = 0.1 mA

IC = 100 mA, VBE = 5.0 V

10,000

1,000 20,000

1.5

V

2.0

V

SMALL SIGNAL CHARACTERISTICS

FT

Transition Frequency

Ccb

Collector-Base Capacitance

IC = 100 mA, VCE = 5.0 V,

200

MHz

VCB = 10 V,f = 1.0 MHz 2N7052

2N7053

10

pF

8.0

*Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 1.0%

Typical Characteristics

Typical Pulsed Current Gain

vs Collector Current

100

80

60

125 °C

40

20

25 °C

- 40°C

0

0.001

0.01

0.1

1

IC - COLLECTOR CURRENT (A)

Collector-Emitter Saturation

Voltage vs Collector Current

2

β = 1000

1.6

1.2

0.8

25 °C

0.4

- 40°C

125 °C

0

10

100

1000

I - COLLECTOR CURRENT (mA)

C

P 06

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