2PA1774RJ 查看數據表（PDF） - Philips Electronics
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2PA1774RJ Datasheet PDF : 8 Pages
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Philips Semiconductors
PNP general purpose transistor
Product specification
2PA1774J
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Refer to SC-89 (SOT490) standard mounting conditions.
CONDITIONS
in free air; note 1
MAX.
500
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
IEBO
hFE
VCEsat
Cc
fT
emitter cut-off current
DC current gain
2PA1774QJ
2PA1774RJ
2PA1774SJ
collector-emitter saturation
voltage
collector capacitance
transition frequency
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
CONDITIONS
IE = 0; VCB = −30 V
IE = 0; VCB = −30 V; Tj = 150 °C
IC = 0; VEB = −4 V
IC = −1 mA; VCE = −6 V; note 1
IC = −50 mA; IB = −5 mA; note 1
MIN.
−
−
−
MAX.
−100
−5
−100
UNIT
nA
µA
nA
120
270
180
390
270
560
−
−200
mV
IE = ie = 0; VCB = −12 V; f = 1 MHz −
2.2
IC = −2 mA; VCE = −12 V;
f = 100 MHz; note 1
100
−
pF
MHz
2001 Aug 03
3
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