A2029 查看數據表（PDF） - ROHM Semiconductor

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A2029

General Purpose Transistor (−50V, −0.15A)

ROHM Semiconductor 

Transistors

!Absolute maximum ratings (Ta=25°C)

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power

dissipation

2SA1037AK, 2SA1576A

2SA2029, 2SA1774

2SA933AS

Junction temperature

Storage temperature

2SA1037AK / 2SA1576A / 2SA1774 /

2SA2029 / 2SA933AS

Symbol

VCBO

VCEO

VEBO

IC

PC

Tj

Tstg

Limits

−60

−50

−6

−0.15

0.2

0.15

0.3

150

−55~+150

Unit

V

V

V

A (DC)

W

˚C

˚C

!Electrical characteristics (Ta=25°C)

Parameter

Symbol Min.

Collector-base breakdown voltage BVCBO −60

Collector-emitter breakdown voltage BVCEO −50

Emitter-base breakdown voltage

BVEBO −6

Collector cutoff current

ICBO

−

Emitter cutoff current

IEBO

−

Collector-emitter saturation voltage VCE(sat) −

DC current transfer ratio

hFE

120

Transition frequency

fT

−

Output capacitance

Cob

−

Typ.

−

−

−

−

−

−

−

140

4.0

Max.

−

−

−

−0.1

−0.1

−0.5

560

−

5.0

Unit

V

V

V

µA

µA

V

−

MHz

pF

Conditions

IC=−50µA

IC=−1µA

IE=−50µA

VCB=−60V

VEB=−6V

IC/IB=−50mA/−5mA

VCE=−6V, IC=−1mA

VCE=−12V, IE=2mA, f=30MHz

VCB=−12V, IE=0A, f=1MHz

!Packaging specifications and hFE

Package

Code

Type

Basic ordering

hFE unit (pieces)

2SA2029 QRS

2SA1037AK QRS

2SA1576A QRS

2SA1774 QRS

2SA933AS QRS

T146

3000

−

−

−

−

T106

3000

−

−

−

−

hFE values are classified as follows:

Item

Q

R

hFE

120~270 180~390

S

270~560

Taping

TL

T2L

3000

8000

−

−

−

−

−

−

−

−

TP

5000

−

−

−

−

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