2SA1109 查看數據表（PDF） - Inchange Semiconductor
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2SA1109 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA1109
DESCRIPTION
·With TO-3 package
·Low collector saturation voltage
·High transition frequency
APPLICATIONS
·For audio frequency amplifier and high
power amplifier applications
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
Collector current
ICM
Collector current-peak
PC
Collector power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25℃
VALUE
-180
-180
-5
-10
-14
200
150
-65~150
UNIT
V
V
V
A
A
W
℃
℃
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