2SA1180 查看數據表（PDF） - Inchange Semiconductor

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2SA1180

Silicon PNP Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ;IB=0

V(BR)CBO Collector-base breakdown voltage IC=-1mA ;IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=-1mA ;IC=0

VCEsat Collector-emitter saturation voltage IC=-5A; IB=-0.5A

VBEsat Base-emitter saturation voltage

IC=-5A; IB=-0.5A

ICBO

Collector cut-off current

VCB=-180V; IE=0

IEBO

Emitter cut-off current

VEB=-6V; IC=0

hFE

DC current gain

IC=-5A ; VCE=-4V

Product Specification

2SA1180

MIN TYP. MAX UNIT

-180

V

-180

V

-6

V

-2.0

V

-2.5

V

-0.1 mA

-0.1 mA

30

2

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