2SA1276 查看數據表（PDF） - Inchange Semiconductor
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2SA1276 Datasheet PDF : 5 Pages
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Inchange Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ,IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=-1mA ,IC=0
VCEsat Collector-emitter saturation voltage IC=-2A; IB=-0.2A
VBE
Base-emitter voltage
IC=-0.5A ; VCE=-2V
ICBO
Collector cut-off current
VCB=-20V; IE=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-0.5A ; VCE=-2V
hFE-2
DC current gain
IC=-2.5A ; VCE=-2V
fT
Transition frequency
IC=-0.5A ; VCE=-2V
Cob
Output capacitance
IE=0 ; VCB=10V;f=1MHz
hFE-1 Classifications
O
Y
70-140
120-240
Product Specification
2SA1276
MIN TYP. MAX UNIT
-30
V
-5
V
-0.3 -0.8
V
-0.75 -1.0
V
-1.0
μA
-1.0
μA
70
240
25
100
MHz
40
pF
2
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