A1308 查看數據表（PDF） - Inchange Semiconductor

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A1308

Silicon PNP Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ; IB=B 0

VCEsat Collector-emitter saturation voltage IC=-3A;IB=-0.15A

VBEsat Base-emitter saturation voltage

IC=-3A;IB=-0.15A

ICBO

Collector cut-off current

VCB=-100V;IE=0

IEBO

Emitter cut-off current

VEB=-7V; IC=0

hFE-1

DC current gain

IC=-1A ; VCE=-1V

hFE-2

DC current gain

IC=-3A ; VCE=-1V

fT

Transition frequency

IC=-1A ; VCE=-4V

COB

Output capacitance

IE=0 ; VCB=-10V;f=1MHz

Product Specification

2SA1308

MIN TYP. MAX UNIT

-100

V

-0.4

V

-1.2

V

-1

μA

-1

μA

70

240

30

60

MHz

200

pF

2

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