2SA1328Y 查看數據表（PDF） - Quanzhou Jinmei Electronic

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2SA1328Y

Silicon PNP Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ,IB=0

VCEsat Collector-emitter saturation voltage IC=-6A; IB=-0.3A

VBEsat Base-emitter saturation voltage

IC=-6A; IB=-0.3A

ICBO

Collector cut-off current

VCB=-60V; IE=0

IEBO

Emitter cut-off current

VEB=-6V; IC=0

hFE-1

DC current gain

IC=-1A ; VCE=-1V

hFE-2

DC current gain

IC=-6A ; VCE=-1V

Cob

Output capacitance

IE=0 ; VCB=-10V;f=1MHz

fT

Transition frequency

IC=-1A ; VCE=-5V

Switching times

ton

Turn-on time

ts

Storage time

tf

Fall time

IB1=- IB2=-0.3A

RL=5Ω;VCC=-30V

‹ hFE-1 Classifications

O

Y

70-140

120-240

Product Specification

2SA1328

MIN TYP. MAX UNIT

-50

V

-0.15 -0.4

V

-0.9 -1.2

V

-10 μA

-10 μA

70

240

40

320

pF

70

MHz

0.3

μs

1.0

μs

0.5

μs

2

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