A1412 查看數據表（PDF） - Renesas Electronics
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A1412 Datasheet PDF : 6 Pages
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DATA SHEET
SILICON POWER TRANSISTOR
2SA1412-Z
PNP SILICON TRIPLE DIFFUSED TRANSISTOR
DESCRIPTION
The 2SA1412-Z is designed for High Voltage Switching, especially in
Hybrid Integrated Circuits.
FEATURES
• High Voltage: VCEO = −400 V
• High Speed: tf ≤ 0.7 μs
• Complement to 2SC3631-Z
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Collector to base voltage
VCBO
−400
V
Collector to emitter voltage
VCEO
−400
V
Base to emitter voltage
VEBO
−7
V
Collector current (DC)
IC(DC)
−2.0
A
Collector current (pulse) Note 1
IC(pulse)
−4.0
A
Total power dissipation (TA = 25°C) Note 2 PT
2.0
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
<R>
PACKAGE DRAWING (Unit: mm)
6.5 ±0.2
5.0 ±0.2
4.4 ±0.2
4
Note
2.3 ±0.2
0.5 ±0.1
Note
123
2.3 ±0.3
0.5 ±0.1
2.3 ±0.3
0.5 ±0.1
0.15 ±0.15
TO-252 (MP-3Z)
1. Base
2. Collector
3. Emitter
4. Collector Fin
Note The depth of notch at the top of the fin is
from 0 to 0.2 mm.
Notes 1. PW ≤ 10 ms, Duty Cycle ≤ 50%
2. When mounted on ceramic substrate of 7.5 cm2 × 0.7 mm
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18250EJ3V0DS00 (3rd edition)
(Previous No. TC-1635A)
Date Published June 2006 NS CP(K)
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
1985, 2006
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