2SA1603 查看數據表（PDF） - Isahaya Electronics
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2SA1603 Datasheet PDF : 3 Pages
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DESCRIPTION
2SA1603 is a super mini package resin sealed
silicon PNP epitaxial transistor,
It is designed for low frequency voltage application.
.
FEATURE
●Small collector to emitter saturation voltage.
VCE(sat)=-0.3V max
●Excellent linearity of DC forward gain.
●Super mini package for easy mounting
〈SMALL-SIGNAL TRANSISTOR〉
2SA1603
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON PNP EPITAXIAL TYPE(Super mini type)
OUTLINE DRAWING
0.425
2.1
1.25 0.425
Unit：ｍｍ
①
②
③
APPLICATION
For Hybrid IC,small type machine low frequency voltage
Amplify application.
JEITA：SC-70
MAXIMUM RATINGS（Ta=25℃）
Symbol
Parameter
Ratings
Unit
VCBO
Collector to Base voltage
-50
V
VCEO
Collector to Emitter voltage
-50
V
VEBO
Emitter to Base voltage
-6
V
IO
Collector current
-100
mA
Pc
Collector dissipation
150
mW
Tj
Junction temperature
＋125
℃
Tstg
Storage temperature
-55〜＋125 ℃
TERMINAL CONNECTER
①：BASE
②：EMITTER
③：COLLECTOR
ELECTRICAL CHARACTERISTICS（Ta=25℃）
Parameter
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
DC forward current gain
C to E Saturation Vlotage
Gain bandwidth product
Collector output capacitance
Symbol
Test conditions
V(BR)CEO
ICBO
IEBO
hFE
hFE
VCE(sat)
fT
Cob
I C=-100μA ,R BE=∞
V CB=-50V, I E=0mA
V EB=-4V, I C=0mA
V CE=-6V, I C=-1mA ※
V CE=-6V, I C=-0.1mA
I C=-30mA ,IB=-1.5mA
V CE=-6V, I E=10mA
V CB=-6V, I E=0,f=1MHz
Min
-50
-
-
120
70
-
-
-
Limits
Typ Max
-
-
-
-0.5
-
-0.5
-
820
-
-
-
-0.3
200
-
2.5
-
Unit
V
μA
μA
V
MHz
pF
※） It shows hFE classification in below table.
Item
ｈＦＥ Item
Ｑ
120 270
Ｒ
180 390
Ｓ
270 560
Ｔ
390 820
ISAHAYA ELECTRONICS CORPORATION
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