2SA1729 查看數據表（PDF） - KEXIN Industrial

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2SA1729

PNP Transistors

KEXIN Industrial 

SMD Type

PNP Transistors

2SA1729

Transistors

■ Features

● Large current capacity.

● Low collector-to-emitter saturation voltage.

● Fast switching speed.

● Small-sized package.

1.70 0.1

0.42 0.1

0.46 0.1

1.Base

2.Collector

3.Emitter

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Rating

Collector - Base Voltage

VCBO

-50

Collector - Emitter Voltage

VCEO

-40

Emitter - Base Voltage

VEBO

-5

Collector Current - Continuous

IC

-1.5

Collector Current -Pulse

ICp

-3

Collector Power Dissipation (Note.1)

PC

1.3

Junction Temperature

TJ

150

Storage Temperature range

Tstg

Note.1: Mounted on ceramic board (250mm 2 X 0.8mm)

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

-55 to 150

Test Conditions

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

VCBO

VCEO

VEBO

ICBO

Ic= -100 uA， IE=0

Ic= -1 mA，RBE= ∞

IE= -100 uA， IC=0

VCB= -40 V , IE=0

Emitter cut-off current

IEBO VEB= -3V , IC=0

Collector-emitter saturation voltage

VCE(sat) IC=-800 mA, IB=-40 mA

Base - emitter saturation voltage

VBE(sat) IC=-800 mA, IB=-40 mA

DC current gain

hFE(1)

hFE(2)

VCE= -2V, IC= -100 mA

VCE= -2V, IC= -1.5 A

Turn-on Time

Storage time

ton

tstg

See specified Test Circuit

Tutn-off time

toff

Collector output capacitance

Cob VCB= -10V, f=1MHz

Transition frequency

fT

VCE= -2V, IC= -100 mA

■ Classification of hfe(1)

Type

2SA1729-Q

2SA1729-R

2SA1729-S

Range

70-140

100-200

140-280

Marking

AGQ

AGR

AGS

Unit

V

A

W

℃

Min

-50

-40

-5

70

25

Typ Max Unit

V

-1

uA

-1

-0.3 -0.8

V

-0.9 -1.3

280

50 100

120 220 ns

150 300

18

pF

300

MHz

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