A1873 查看數據表（PDF） - Toshiba
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A1873 Datasheet PDF : 3 Pages
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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1873
2SA1873
Audio Frequency General Purpose Amplifier Applications
• Small package (dual type)
• High voltage and high current: VCEO = −50 V, IC = −150 mA (max)
• High hFE
• Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA)
= 0.95 (typ.)
• Complementary to 2SC4944
Unit: mm
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 common)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
VCBO
VCEO
VEBO
IC
−50
V
−50
V
−5
V
−150
mA
Base current
IB
−30
mA
Collector power dissipation
PC
200
mW
(Note 1)
Junction temperature
Tj
125
°C
JEDEC
―
Storage temperature range
Tstg
−55 to 125
°C
JEITA
―
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
TOSHIBA
2-2L1A
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
Weight: 6.2 mg (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
Marking
Equivalent Circuit (top view)
Electrical Characteristics (Ta = 25°C) (Q1, Q2 common)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
ICBO
IEBO
VCB = −50 V, IE = 0
VEB = −5 V, IC = 0
DC current gain
hFE
(Note)
VCE = −6 V, IC = −2 mA
Collector-emitter saturation voltage
VCE (sat) IC = −100 mA, IB = −10 mA
Transition frequency
Collector output capacitance
fT
VCE = −10 V, IC = −1 mA
Cob
VCB = −10 V, IE = 0, f = 1 MHz
Note 2: hFE classification Y (Y): 120 to 240, GR (G): 200 to 400
( ) marking symbol
1
Min Typ. Max Unit
⎯
⎯ −0.1 μA
⎯
⎯ −0.1 μA
120
⎯
400
⎯
−0.1 −0.3
V
80
⎯
⎯ MHz
⎯
4
7
pF
Start of commercial production
1992-07
2014-03-01
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