2SA1908 查看數據表（PDF） - Inchange Semiconductor
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2SA1908 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA1908
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; IB=0
-120
V
VCEsat Collector-emitter saturation voltage IC=-3 A;IB=-0.3 A
ICBO
Collector cut-off current
VCB=-120V; IE=0
IEBO
Emitter cut-off current
VEB=-6V; IC=0
-0.5
V
-10 μA
-10 μA
hFE
DC current gain
IC=-3A ; VCE=-4V
50
180
fT
Transition frequency
IC=-0.5A ; VCE=-12V
20
MHz
COB
Output capacitance
IE=0; VCB=-10V;f=1MHz
300
pF
Switching times
导体 ton
Turn-on time
固I电NC半HANGE SEMICONDUCTOR ts
Storage time
tf
Fall time
hFE classifications
IC=-4A;RL=10Ω
IB1=-IB2=-0.4A
VCC=-40V
0.14
μs
1.40
μs
0.21
μs
O
P
Y
50-100 70-140 90-180
2
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