2SA1942O 查看數據表（PDF） - Inchange Semiconductor
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2SA1942O Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA1942
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;IB=0
-160
V
VCEsat Collector-emitter saturation voltage IC=-8A ;IB=-0.8A
-2.5
V
VBE
Base-emitter voltage
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
IC=-6A ; VCE=-5V
VCB=-160V; IE=0
VEB=-5V; IC=0
-1.5
V
-5
μA
-5
μA
hFE-1
DC current gain
IC=-1A ; VCE=-5V
55
160
hFE-2
DC current gain
导体 fT
Transition frequency
固I电NC半HANGE SEMICONDUCTOR COB
Collector output capacitance
hFE-1 classifications
R
O
IC=-6A ; VCE=-5V
IC=-1A ; VCE=-5V
IE=0; f=1MHz;VCB=-10V
35
30
320
MHz
pF
55-110
80-160
2
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