A1986O 查看數據表（PDF） - Inchange Semiconductor
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A1986O Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA1986
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; IB=0
-230
V
VCEsat Collector-emitter saturation voltage IC=-8 A;IB=-0.8A
-3.0
V
VBE
Base-emitter voltage
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
IC=-7A ; VCE=-5V
VCB=-230V; IE=0
VEB=-5V; IC=0
-1.5
V
-5
μA
-5
μA
hFE-1
DC current gain
IC=-1A ; VCE=-5V
55
160
hFE-2
DC current gain
IC=-7A ; VCE=-5V
35
体 fT
Transition frequency
固I电NC半H导ANGE SEMICONDUCTOR COB
Output capacitance
hFE-1 classifications
R
O
IC=-1A ; VCE=-5V
IE=0; VCB=-10V;f=1MHz
30
MHz
360
pF
55-110
80-160
2
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