A1860 查看數據表（PDF） - Quanzhou Jinmei Electronic
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A1860 Datasheet PDF : 4 Pages
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JMnic
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-25mA; IB=0
VCEsat Collector-emitter saturation voltage IC=-5 A;IB=-0.5 A
ICBO
Collector cut-off current
VCB=-150V; IE=0
IEBO
Emitter cut-off current
hFE
DC current gain
fT
Transition frequency
VEB=-5V; IC=0
IC=-5A ; VCE=-4V
IC=-2A ; VCE=-12V
COB
Output capacitance
IE=0; VCB=-10V;f=1MHz
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=-5A;RL=12Ω
IB1=-IB2=-0.5A
VCC=-60V
hFE classifications
O
P
Y
50-100 70-140 90-180
Product Specification
2SA1860
MIN TYP. MAX UNIT
-150
V
-2.0
V
-100 μA
-100 μA
50
180
50
MHz
400
pF
0.25
μs
0.85
μs
0.20
μs
2
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