2SA684 查看數據表（PDF） - Unisonic Technologies

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2SA684

PNP SILICON TRANSISTOR

Unisonic Technologies 

2SA684

PNP SILICON TRANSISTOR

„ ABSOLUTE MAXIMUM RATINGS ( Ta=25℃ ,unless otherwise specified )

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

-60

V

Collector-Emitter Voltage

VCEO

-50

V

Emitter-Base Voltage

VEBO

-5

V

Peak Collector Current

ICP

-1.5

A

Collector Current (DC)

IC

-1

A

Collector Dissipation

SOT-89

TO-92NL

PC

500

mW

1000

mW

Junction Temperature

Storage Temperature

TJ

+150

℃

TSTG

-55 ~ +150

℃

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

„ ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)

PARAMETER

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-Off Current

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Current Gain Bandwidth Product

Output Capacitance

SYMBOL

TEST CONDITIONS

BVCBO IC=-10μA, IE=0

BVCEO IC=-2mA, IB=0

BVEBO IE=-10μA, IC =0

ICBO VCB=-20V, IE=0

hFE1 VCE=-10V, IC=-500mA

hFE2 VCE=-5V, IC=-1A

VCE(SAT) IC=-0.5A, IB=-50mA

VBE(SAT) IC=-0.5A, IB=-50mA

fT VCE=-10V, IB=50mA, f=200MHz

Cob VCB=-10V, IE=0, f=1MHz

„ CLASSIFICATION OF hFE1

RANK

RANGE

Q

85-170

R

120-240

MIN TYP MAX UNIT

-60

V

-50

V

-5

V

-0.1 μA

85

340

50

-0.2 -0.4 V

-0.85 -1.2 V

200

MHz

20 30 pF

S

170-340

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 5

QW-R211-006.C

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