A740 查看數據表（PDF） - Inchange Semiconductor

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A740

Silicon PNP Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Power Transistor

isc Product Specification

2SA740

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-Emitter Breakdown Voltage IC= -5mA ; IB= 0

V(BR)CBO Collector-Base Breakdown Voltage

IC= -1mA ; IE= 0

V(BR)EBO Emitter-Base Breakdown Voltage

IE= -1mA ; IC= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A; IB=B -50mA

VBE(on) Base-Emitter On Voltage

IC= -0.5A ; VCE= -10V

ICBO

Collector Cutoff Current

VCB= -100V ; IE= 0

IEBO

Emitter Cutoff Current

VEB= -5V; IC= 0

hFE

DC Current Gain

IC= -0.5A ; VCE= -10V

COB

Output Capacitance

fT

Current-Gain—Bandwidth Product

IE= -0; VCB= -10V; ftest= 1MHz

IC= -0.5A;VCE= -10V

MIN TYP. MAX UNIT

-150

V

-150

V

-5

V

-1.5

V

-1.0

V

-20 μA

-10 μA

40

140

90

pF

8

MHz

isc Website：www.iscsemi.cn

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