A748 查看數據表（PDF） - Inchange Semiconductor
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A748 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ,IB=0
V(BR)CBO Collector-base breakdown voltage
IC=-1mA ,IE=0
VCEsat Collector-emitter saturation voltage IC=-1A; IB=-0.1A
VBEsat Base-emitter saturation voltage
IC=-2A; IB=-0.2A
ICBO
Collector cut-off current
VCB=-40V; IE=0
ICEO
Collector cut-off current
VCE=-20V; IB=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-0.1A ; VCE=-5V
hFE-2
DC current gain
IC=-1A ; VCE=-5V
fT
Transition frequency
IC=0.5A ; VCE=-5V
hFE-2 Classifications
P
Q
R
50-100 80-160 120-220
Product Specification
2SA748
MIN TYP. MAX UNIT
-50
V
-70
V
-0.6 -1.0
V
-1.0 -1.5
V
-1
μA
-100 μA
-100 μA
30
50
220
120
MHz
2
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