A754 查看數據表（PDF） - Inchange Semiconductor

零件编号

产品描述 (功能)

生产厂家

A754

Silicon PNP Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Power Transistor

isc Product Specification

2SA754

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= -50V(Min)

·Low Collector Saturation Voltage-

: VCE(sat)= -1.3V(Max.) @ IC= -1.5A

·Good Linearity of hFE

APPLICATIONS

·Designed for low frequency power amplifier applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE UNIT

VCBO Collector-Base Voltage

-50

V

VCEO Collector-Emitter Voltage

-50

V

VEBO Emitter-Base Voltage

-4

V

IC

Collector Current-Continuous

-2

A

PC

Total Power Dissipation@ TC=25℃

20

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150 ℃

isc Website：www.iscsemi.cn

Share Link: