A754 查看數據表（PDF） - Inchange Semiconductor

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A754

Silicon PNP Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Power Transistor

isc Product Specification

2SA754

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

V(BR)CBO Collector-Base Breakdown Voltage

IC= -5mA; IE= 0

V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; RBE= ∞

V(BR)EBO Emitter-Base Breakdown Voltage

IE= -5mA; IC= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= -1.5A; IB=B -0.15A

VBE(on) Collector-Emitter On Voltage

IC= -1A; VCE= -4V

ICBO

Collector Cutoff Current

VCB= -20V; IE= 0

hFE-1

DC Current Gain

IC= -1A; VCE= -4V

hFE-2

DC Current Gain

IC= -0.1A; VCE= -4V

fT

Current-Gain—Bandwidth Product

IC= -0.5A; VCE= -4V

-50

V

-50

V

-4

V

-1.3

V

-1.5

V

-100 μA

35

200

35

50

MHz

‹ hFE-1 Classifications

A

B

C

35-70 50-120 100-200

isc Website：www.iscsemi.cn

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