A756 查看數據表（PDF） - Inchange Semiconductor

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A756

Silicon PNP Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;RBE=∞

V(BR)CBO Collector-base breakdown voltage IC=-5mA ,IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=-5mA ,IC=0

VCEsat Collector-emitter saturation voltage IC=-5A; IB=-1A

VBE

Base-emitter on voltage

IC=-1A ; VCE=-5V

ICBO

Collector cut-off current

VCB=-30V; IE=0

hFE-1

DC current gain

IC=-1A ; VCE=-5V

hFE-2

DC current gain

IC=-5A ; VCE=-5V

fT

Transition frequency

IC=-1A ; VCE=-5V

‹ hFE-1 Classifications

A

B

C

35-70 60-120 100-200

Product Specification

2SA756

MIN TYP. MAX UNIT

-80

V

-100

V

-6

V

-1.8

V

-1.5

V

-1

mA

35

200

20

20

MHz

2

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