2SA766 查看數據表（PDF） - Inchange Semiconductor

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2SA766

Silicon PNP Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon PNP Power Transistors

Product Specification

2SA766

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-emitter sustaining voltage IC=-0.2A ;L=25mH,RBE=5kΩ

V(BR)EBO Emitter-base breakdown voltage

IE=-1mA ;IC=0

VCEsat Collector-emitter saturation voltage IC=-1A; IB=-0.1A

VBE-1

Base-emitter saturation voltage

IC=-0.1A ; VCE=-5V

VBE-2

Base-emitter saturation voltage

IC=-0.5A ; VCE=-5V

ICBO

Collector cut-off current

VCB=-60V; IE=0

hFE-1

DC current gain

IC=-0.1A ; VCE=-5V

hFE-2

DC current gain

IC=-0.5A ; VCE=-5V

fT

Transition frequency

IE=0.1A ; VCB=-10V

MIN TYP. MAX UNIT

-150

V

-5

V

-1.0

V

-0.8

V

-1.0

V

-30

μA

35

150

35

15

MHz

2

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