Inchange Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-1mA ,IB=B 0
V(BR)CBO Collector-base breakdown voltage
IC=-10μA ,IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=-10μA ,IC=0
VCEsat
Collector-emitter saturation voltage IC=-500mA; IB=B -50mA
ICBO
Collector cut-off current
VCB=-100V; IE=0
IEBO
Emitter cut-off current
VEB=-4V; IC=0
hFE
DC current gain
IC=-50mA ; VCE=-4V
fT
Transition frequency
IC=-50mA ; VCE=-4V
Product Specification
2SA775
MIN TYP. MAX UNIT
-100
V
-100
V
-4
V
-1.0
V
-1.0 μA
-1.0 μA
50
30
MHz
2