A754 查看數據表（PDF） - SavantIC Semiconductor

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A754

Silicon PNP Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon PNP Power Transistors

Product Specification

2SA754

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ,IB=0

V(BR)CBO Collector-base breakdown voltage

IC=-1mA; IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=-1mA; IC=0

VCEsat Collector-emitter saturation voltage IC=-1A; IB=-0.1A

ICBO

Collector cut-off current

VCB=-50V; IE=0

IEBO

Emitter cut-off current

VEB=-5V; IC=0

hFE

DC current gain

IC=-1A ; VCE=-4V

fT

Transition frequency

IC=-0.5A ; VCE=-10V

MIN TYP. MAX UNIT

-50

V

-50

V

-5

V

-1.0

V

-100 µA

-100 µA

35

320

50

MHz

2

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