2SA765 查看數據表（PDF） - SavantIC Semiconductor
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2SA765 Datasheet PDF : 3 Pages
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SavantIC Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0
V(BR)CBO Collector-base breakdown voltage IC=-1mA ;IE=0
VCEsat Collector-emitter saturation voltage IC=-4A; IB=-0.4A
VBEsat
Base-emitter saturation voltage
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
hFE
DC current gain
IC=-4A; IB=-0.4A
VCB=-80V; IE=0
VEB=-6V; IC=0
IC=-1A ; VCE=-4V
fT
Transition frequency
IC=-0.5A ; VCE=-12V
Product Specification
2SA765
MIN TYP. MAX UNIT
-80
V
-80
V
-1.5
V
-2.0
V
-10
µA
-10
µA
50
10
MHz
2
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