2SB1000-J 查看數據表（PDF） - KEXIN Industrial

零件编号

产品描述 (功能)

生产厂家

2SB1000-J

PNP Transistors

KEXIN Industrial 

SMD Type

PNP Transistors

2SB1000

Transistors

■ Features

● Low frequency power amplifier

● Complementary to 2SD1366

1.70 0.1

0.42 0.1

0.46 0.1

1.Base

2.Collector

3.Emitter

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Collector Current - Continuous

Collector current -Pulse

(Note.1)

Collector Power Dissipation

Junction Temperature

Storage Temperature range

Symbol

VCBO

VCEO

VEBO

IC

ICP

PC

TJ

Tstg

Rating

-25

-20

-5

-1

-1.5

1

150

-55 to 150

Note.1: PW ≤ 10ms,Duty cycle≤ 20℅

■ Electrical Characteristics Ta = 25℃

Parameter

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

Collector-emitter saturation voltage

Base - emitter saturation voltage

DC current gain

Collector output capacitance

Transition frequency

Symbol

Test Conditions

VCBO Ic= -100 μA， IE=0

VCEO Ic= -1 mA， IB=0

VEBO IE= -100μA， IC=0

ICBO VCB= -20V , IE=0

IEBO VEB= -4V , IC=0

VCE(sat) IC=-800 mA, IB=-80mA

VBE(sat) IC=-800 mA, IB=-80mA

hFE VCE= -2V, IC= -500 mA

Cob VCB = –10V, IE = 0, f = 1MHz

fT

VCE= -2V, IC= -500mA

■ Classification of hfe

Type

Range

Marking

2SB1000-H

85-170

AH

2SB1000-J

120-240

AJ

Unit

V

A

W

℃

Min Typ Max Unit

-25

-20

V

-5

-0.1

uA

-0.1

-0.2 -0.3

V

-0.94 -1.1

85

240

38

pF

200

MHz

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