2SB1001-H(V2) 查看數據表（PDF） - KEXIN Industrial
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2SB1001-H Datasheet PDF : 3 Pages
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SMD Type
Transistors
PNP Transistors
2SB1001
■ Typical Characterisitics
Maximum Collector Dissipation Curve
1.2
0.8
–100
–80
Typical Output Characteristics (1)
–0.35 –0.3–0.25
–0.2
–60
–0.15
–40
–0.1
0.4
–20
–0.05 mA
0
50
100
150
Ambient Temperature Ta (。C)
IB = 0
0
–2 –4 –6 –8 –10
Collector to Emitter Voltage VCE (V)
Typical Output Characteristics (2)
–2.0
–25
–20
–15
–1.6
–10
–1.2
–5 mA
–0.8
–0.4
IB = 0
0
–0.4 –0.8 –1.2 –1.6 –2.0
Collector to Emitter Voltage VCE (V)
–1,000
–300
Typical Transfer Characteristics
VCE = –2 V
Pulse
–100
–30
–10
Ta = 75。C
25 –25
–3
–1
0 –0.2 –0.4 –0.6 –0.8 –1.0
Base to Emitter Voltage VBE (V)
10,000
DC Current Transfer Ratio vs.
Collector Current
3,000 VCE = –2 V
Pulse
1,000
25
Ta = 75。C
300
100
–25
30
10
–1
–3 –10 –30 –100 –300 –1,000
Collector Current IC (mA)
Saturation Voltage vs. Collector Current
–3.0
–1.0
VBE (sat)
–0.3
–0.1
–0.03
–0.01
VCE (sat)
IC = 10 IB
Pulse
–0.003
–3
–10 –30 –100 –300 –1,000–3,000
Collector Current IC (mA)
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