A885R 查看數據表（PDF） - SavantIC Semiconductor

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A885R

Silicon PNP Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon PNP Power Transistors

Product Specification

2SA885

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-2mA;IB=0

V(BR)CBO Collector-base breakdown voltage IC=-10µA ;IE=0

VCEsat Collector-emitter saturation voltage IC=-0.5A ;IB=-50mA

ICBO

Collector cut-off current

VCB=-20V; IE=0

ICEO

Collector cut-off current

VCE=-20V; IB=0

IEBO

Emitter cut-off current

VEB=-5V; IC=0

hFE-1

DC current gain

IC=-0.5A ; VCE=-10V

hFE-2

DC current gain

IC=-1A ; VCE=-5V

COB

Output capacitance

IE=0 ; VCB=-10V;f=1MHz

fT

Transition frequency

IC=50mA ; VCB=-10V,f=200MHz

MIN TYP. MAX UNIT

-35

V

-45

V

-0.5

V

-0.1 µA

-100 µA

-10 µA

85

340

50

20

30

pF

200

MHz

hFE-1 Classifications

Q

R

S

85-170 120-240 170-340

2

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