A839 查看數據表（PDF） - Quanzhou Jinmei Electronic

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产品描述 (功能)

生产厂家

A839

Silicon PNP Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ,IB=0

V(BR)EBO Emitter-base breakdown voltage

IE=-1mA ,IC=0

VCEsat Collector-emitter saturation voltage IC=-0.5A; IB=-50mA

VBE

Base-emitter on voltage

IC=-0.5A ; VCE=-10V

ICBO

Collector cut-off current

VCB=-100V; IE=0

IEBO

Emitter cut-off current

VEB=-5V; IC=0

hFE-1

DC current gain

IC=-0.5A ; VCE=-10V

hFE-2

DC current gain

IC=-1A ; VCE=-10V

COB

Output capacitance

IE=0 ; VCB=-10V;f=1MHz

fT

Transition frequency

IC=-0.5A ; VCE=-10V

‹ hFE-1 Classifications

R

O

Y

40-80 70-140 120-240

Product Specification

2SA839

MIN TYP. MAX UNIT

-150

V

-5

V

-1.5

V

-1.0

V

-20 μA

-10 μA

40

240

20

100

pF

6

MHz

2

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