A887 查看數據表（PDF） - Quanzhou Jinmei Electronic

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生产厂家

A887

Silicon PNP Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-10mA; IB=0

V(BR)CBO Collector-base breakdown voltage

IC=-1mA; IE=0

VCEsat Collector-emitter saturation voltage IC=-1A ;IB=-0.1A

VBEsat Base-emitter saturation voltage

IC=-2A ;IB=-0.2 A

hFE-1

DC current gain

IC=-100mA ; VCE=-5V

hFE-2

DC current gain

IC=-1A ; VCE=-5V

ICBO

Collector cut-off current

VCB=-40V; IE=0

ICEO

Collector cut-off current

VCE=-20V; IB=0

IEBO

Emitter cut-off current

VEB=-5V; IC=0

fT

Transition frequency

IE=0.5A ; VCB=-5V

‹ hFE-2 Classifications

P

Q

R

50-100 80-160 120-220

Product Specification

2SA887

MIN TYP. MAX UNIT

-50

V

-70

V

-0.6 -1.2

V

-1.0 -1.5

V

30

50

220

-1.0 μA

-100 μA

-10

μA

150

MHz

2

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