2SB1072S 查看數據表（PDF） - Hitachi -> Renesas Electronics

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2SB1072S

Silicon PNP Triple Diffused

Hitachi -> Renesas Electronics 

2SB1072(L), 2SB1072(S)

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

C to E diode forward current

Collector peak current

Collector power dissipation

Junction temperature

Storage temperature

Note: 1. Value at TC = 25°C

Symbol

VCBO

VCEO

VEBO

IC

ID*1

I C(peak)

PC * 1

Tj

Tstg

Rating

Unit

–100

V

–80

V

–7

V

–4

A

4

A

–8

A

20

W

150

°C

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ

Collector to emitter breakdown V(BR)CEO –80 —

voltage

Emitter to base breakdown

V(BR)EBO

–7

—

voltage

Collector cutoff current

DC current transfer ratio

Collector to emitter saturation

voltage

Base to emitter saturation

voltage

C to E diode forward voltage

Turn on time

Storage time

Fall time

Note: 1. Pulse test.

I CBO

I CEO

hFE

VCE(sat)1

VCE(sat)2

VBE(sat)1

VBE(sat)2

VD

t on

t stg

tf

—

—

—

—

1000 —

—

—

—

—

—

—

—

—

—

—

—

0.5

—

1.5

—

1.0

Max Unit

—

V

—

V

–100 µA

–10 µA

20000

–1.5 V

–3.0 V

–2.0 V

–3.5 V

3.0 V

—

µs

—

µs

—

µs

Test conditions

IC = –25 mA, RBE = ∞

IE = –50 mA, IC = 0

VCB = –80 V, IE = 0

VCE = –60 V, RBE = ∞

VCE = –3 V, IC = –2 A*1

IC = –2 A, IB = –4 mA*1

IC = –4 A, IB = –40 mA*1

IC = –2 A, IB = –4 mA*1

IC = –4 A, IB = –40 mA*1

ID = 4 A*1

IC = –2 A, IB1 = –IB2 = –4 mA

2

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