2SB1072S 查看數據表（PDF） - Hitachi -> Renesas Electronics

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2SB1072S

Silicon PNP Triple Diffused

Hitachi -> Renesas Electronics 

2SB1072(L), 2SB1072(S)

Saturation Voltage vs. Collector Current

–100

IC/IB = 500

–10

TC = –25°C

TC = 25°C

VBE(sat)

–1.0

VCE(sat)

TC = 75°C

–0.1

–0.1 –0.3

–1.0

–3

–10

Collector current IC (A)

Switching Time vs. Collector Current

30

10

3

ton

tstg

1.0

tf

0.3

0.1

VCC = –30 V

IC = 500 IB1 = –500 IB2

0.03

–0.1 –0.3

–1.0

–3

–10

Collector current IC (A)

Transient Thermal Resistance

100

10

1.0

0.1

0.1

1.0

100 ms–10 sec.

1 ms–100 ms

TC = 25°C

1.0

10

Time t

10 (s)

100 (ms)

4

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