2SB1132(2005) 查看數據表（PDF） - Unisonic Technologies
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2SB1132 Datasheet PDF : 4 Pages
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2SB1132
TYPICAL CHARACTERISTICS(Cont.)
Gain Bandwidth Product
vs. Emitter Current
Ta=25°C
VCE = -5V
200
100
50
20
-1
-2 -5 -10 -20 -50 -100
Emitter Current, IB(mA)
Safe Operation Area
-5
-2
-1
-0.5
-0.2
-0.1
-0.05
Ta=25°C
-0.02
-0.01
*Single pulse
0 -0.2 -0.5 -1 -2
-5 -10 -20 -50
Collector to Emitter Voltage, VCE(V)
PNP SILICON TRANSISTOR
Collector Output Capacitance
vs.Collector-Base Voltage
100
Ta=25°C
f=1MHz
IE=0A
50
20
10
-0.5 -1
-2
-5 -10 -20
Collector to Base Voltage, VCB(V)
1000
Transient Thermal Resistance
Ta=25°C
100
10
1
0.1
0.001 0.01 0.1 1 10 100 1000
Time, t(s)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R208-016,B
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