2SB1065 查看數據表（PDF） - Inchange Semiconductor
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2SB1065 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB1065
DESCRIPTION
·
·With TO-126 package
·Complement to type 2SD1506
·Low collector saturation voltage
APPLICATIONS
·For use in low frequency power
amplifier applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
固I电NC半H导A体NGE SEMICONDUCTOR Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-60
-50
-5
UNIT
V
V
V
IC
Collector current
-3
A
ICM
Collector current-peak
-4.5
A
PD
Total power dissipation
TC=25℃
10
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
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