2SB1065 查看數據表（PDF） - Inchange Semiconductor

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2SB1065

Silicon PNP Power Transistora

Inchange Semiconductor 

Inchange Semiconductor

Silicon PNP Power Transistors

Product Specification

2SB1065

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=-1mA ,IB=0

-50

V

V(BR)CBO Collector-base breakdown voltage

IC=-50μA ,IE=0

-60

V

V(BR)EBO Emitter-base breakdown voltage

IE=-50μA ,IC=0

-5

V

VCEsat Collector-emitter saturation voltage IC=-2A; IB=-0.2A

-1.0

V

VBEsat Base-emitter saturation voltage

IC=-2A; IB=-0.2A

-1.5

V

ICBO

Collector cut-off current

VCB=-40V; IE=0

-1.0 μA

IEBO

Emitter cut-off current

VEB=-4V; IC=0

-1.0 μA

体 hFE

DC current gain

固I电NC半H导ANGE SEMICONDUCTOR COB

Output capacitance

fT

Transition frequency

‹ hFE Classifications

IC=-0.5A ; VCE=-3V

IE=0 ; VCB=-10V,f=1MHz

IC=-0.5A ; VCE=-5V

56

390

50

pF

70

MHz

N

P

Q

R

56-120 82-180 120-270 180-390

2

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