2SB1064 查看數據表（PDF） - SavantIC Semiconductor
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2SB1064 Datasheet PDF : 3 Pages
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SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB1064
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-1mA ,IB=0
V(BR)CBO Collector-base breakdown voltage
IC=-50µA ,IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=-50µA ,IC=0
VCEsat Collector-emitter saturation voltage IC=-2A; IB=-0.2A
VBEsat
Base-emitter saturation voltage
IC=-2A; IB=-0.2A
ICBO
Collector cut-off current
VCB=-40V; IE=0
IEBO
Emitter cut-off current
VEB=-4V; IC=0
hFE
DC current gain
IC=-0.5A ; VCE=-3V
COB
Output capacitance
IE=0 ; VCB=-10V,f=1MHz
fT
Transition frequency
IC=-0.5A ; VCE=-5V
MIN TYP. MAX UNIT
-50
V
-60
V
-5
V
-1.0
V
-1.5
V
-1.0
µA
-1.0
µA
60
320
50
pF
70
MHz
2
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