2SB1063 查看數據表（PDF） - Quanzhou Jinmei Electronic
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2SB1063 Datasheet PDF : 3 Pages
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JMnic
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEsat Collector-emitter saturation voltage IC=-3A ;IB=-0.3A
VBE
Base-emitter on voltage
IC=-3A ; VCE=-5V
ICBO
Collector cut-off current
VCB=-100V; IE=0
IEBO
Emitter cut-off current
VEB=-3V; IC=0
hFE-1
DC current gain
IC=-20mA ; VCE=-5V
hFE-2
DC current gain
IC=-1A ; VCE=-5V
hFE-3
DC current gain
IC=-3A ; VCE=-5V
fT
Transition frequency
IC=-0.5A ; VCE=-5V
COB
Collector output capacitance
IE=0 ; VCB=-10V; f=1MHz
hFE-2 Classifications
R
Q
P
40-80 60-120 100-200
Product Specification
2SB1063
MIN TYP. MAX UNIT
-2.0
V
-1.8
V
-50 μA
-50 μA
20
40
200
20
20
MHz
170
pF
2
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