2SB1198L-Q-AE3-R(2011) 查看數據表（PDF） - Unisonic Technologies

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产品描述 (功能)

生产厂家

2SB1198L-Q-AE3-R
(Rev.:2011)

LOW FREQUENCY PNP TRANSISTOR

Unisonic Technologies 

2SB1198

„ TYPICAL CHARACTERISTICS

-10

-5

-2

-1

-500m

-200m

-100m

-50m

Figure 1. Grounded Emitter

Propagation Characteristics

Ta=100℃

VCE = -3V

Ta=25℃

Ta= -25℃

-20m

-10m

-5m

-2m

-1m

0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4

Base to Emitter Voltage, VBE (V)

PNP EPITAXIAL SILICON TRANSISTOR

Figure 2. Grounded Emitter

Output Characteristics

-0.5 Ta=25℃

-5.0mA

-45mA

-0.4

-40mA

-35mA

-30mA

-0.3

-25mA

-20mA

-1.5mA

-1.0mA

-0.2

-0.5mA

-0.1

0

IB =0mA

0 -0.4 -0.8 -1.2 -1.6 -2.0

Collector To Emitter Voltage, VCE (V)

Figure 5. Collector-emitter Saturation

Voltage vs. Collector Current (II)

-2

IC/IB=10

-1

-500m

-200m

-100m

-50m

Ta= 100℃

Ta= 25℃

Ta= -25℃

-20m

-10m

-1

-10

-100

-1A

Collector Current, IC (mA)

Figure 6. Collector-Emitter Saturation

Voltage vs. Collector Current (III)

-2

IC/IB=20

-1

-500m

-200m

-100m

-50m

Ta= 100℃

Ta= 25℃

Ta= -25℃

-20m

-10m

-1

-10

-100

-1A

Collector Current, IC (mA)

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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