2SB1255 查看數據表（PDF） - Inchange Semiconductor
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2SB1255 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon PNP Darlington Power Transistors
Product Specification
2SB1255
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO Collector-emitter voltage
IC=-30mA ; IB=0
VCEsat Collector-emitter saturation voltage IC=-7A ;IB=-7mA
VBEsat Base-emitter saturation voltage
IC=-7A ;IB=-7mA
ICBO
Collector cut-off current
VCB=-160V; IE=0
ICEO
Collector cut-off current
VCE=-140V; IB=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-1A ; VCE=-5V
hFE -2
DC current gain
IC=-7A ; VCE=-5V
fT
Transition frequency
IC=0.5A ; VCE=-10V;f=1MHz
Switching times
ton
Turn-on time
tstg
Storage time
tf
Fall time
IC=-7A; VCC=-50V
IB1=-IB2=-7mA
MIN TYP. MAX UNIT
-140
V
-2.5
V
-3.0
V
-100 μA
-100 μA
-100 μA
2000
5000
30000
20
MHz
1.0
μs
1.5
μs
1.2
μs
hFE-2 classifications
Q
P
5000-15000 8000-30000
2
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