2SB1462 查看數據表（PDF） - Panasonic Corporation

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2SB1462

Silicon PNP epitaxial planer type(For low-frequency output amplification)

Panasonic Corporation 

Transistor

2SB1462

Silicon PNP epitaxial planar type

For general amplification

Complementary to 2SD2216

s Features

• High forward current transfer ratio hFE

• SS-Mini type package, allowing downsizing of the equipment

and automatic insertion through the tape packing and the maga-

zine packing

s Absolute Maximum Ratings Ta = 25°C

Parameter

Symbol Rating

Unit

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Peak collector current

Collector current

Collector power dissipation

Junction temperature

Storage temperature

VCBO

−60

V

VCEO

−50

V

VEBO

−7

V

ICP

−200

mA

IC

−100

mA

PC

125

mW

Tj

125

°C

Tstg

−55 to +125

°C

0.2+–00..015

3

Unit: mm

0.15+–00..015

1

2

(0.5) (0.5)

1.0±0.1

1.6±0.1

5˚

1: Base

2: Emitter

3: Collector

EIAJ: SC-75

SSMini3-G1 Package

Marking symbo：l A

s Electrical Characteristics Ta = 25°C

Parameter

Symbol

Conditions

Min

Collector cutoff current

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Forward current transfer ratio *

Collector to emitter saturation voltage

Transition frequency

Collector output capacitance

ICBO

ICEO

VCBO

VCEO

VEBO

hFE

VCE(sat)

fT

Cob

VCB = −20 V, IE = 0

VCE = −10 V, IB = 0

IC = −10 µA, IE = 0

−60

IC = −100 µA, IB = 0

−50

IE = −10 µA, IC = 0

−7

VCE = −10 V, IC = −2 mA

160

IC = −100 mA, IB = −10 mA

VCB = −10 V, IE = 1 mA, f = 200 MHz

VCB = −10 V, IE = 0, f = 1 MHz

Note) *: hFE Rank classification

Rank

Q

R

S

hFE

Marking symbol

160 to 260

AQ

210 to 340

AR

290 to 460

AS

Typ Max

− 0.1

−100

460

− 0.11 − 0.3

80

2.7

Unit

µA

V

V

V

V

MHz

pF

Publication date: March 2002

SJC00272AED

1

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