2SB1495 查看數據表（PDF） - Toshiba
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2SB1495 Datasheet PDF : 4 Pages
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TOSHIBA Transistor Silicon PNP Epitaxial Type
2SB1495
High-Power Switching Applications
2SB1495
Unit: mm
• High DC current gain: hFE = 2000 (min) (VCE = −2 V, IC = −2 A)
• Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −1.5 A)
• Complementary to 2SD2257
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
−100
V
Collector-emitter voltage
VCEO
−100
V
Emitter-base voltage
VEBO
−8
V
DC
IC
Collector current
Pulsed
ICP
−3
A
−5
Base current
IB
−0.3
A
Collector power
dissipation
Ta = 25°C
Tc = 25°C
PC
2.0
W
20
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
−55 to 150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-10R1A
Weight: 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Equivalent Circuit
Collector
Base
≈ 4 kΩ
≈ 800 Ω
Emitter
1
2006-11-21
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