B1366 查看數據表（PDF） - SavantIC Semiconductor

零件编号

产品描述 (功能)

生产厂家

B1366

Silicon PNP Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon PNP Power Transistors

Product Specification

2SB1366

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;IB=0

VCEsat Collector-emitter saturation voltage IC=-2A ;IB=-0.2A

VBE

Base-emitter on voltage

IC=-0.5A;VCE=-5V

ICBO

Collector cut-off current

VCB=-60V; IE=0

IEBO

Emitter cut-off current

VEB=-7V; IC=0

hFE-1

DC current gain

IC=-0.5A ; VCE=-5V

hFE-2

DC current gain

IC=-3A ; VCE=-5V

fT

Transition frequency

IC=-0.5A ; VCE=-5V

COB

Collector output capacitance

f=1MHz;VCB=-10V

Switching times

ton

Turn-on time

ts

Storage time

tf

Fall time

IC=-2.0A IB1=-IB2=-0.2A

VCC=-30V ,RL=15D

MIN TYP. MAX UNIT

-60

V

-1.0

V

-1.0

V

-0.1 mA

-0.1 mA

60

200

20

9.0

MHz

150

pF

0.4

µs

1.7

µs

0.5

µs

hFE-1 Classifications

O

Y

60-120

100-200

2

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