HA-5135 查看數據表（PDF） - Intersil
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HA-5135 Datasheet PDF : 10 Pages
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Die Characteristics
DIE DIMENSIONS:
72 mils x 103 mils x 19 mils
(1840µm x 2620µm x 483µm)
METALLIZATION:
Type: Al, 1% Cu
Thickness: 16kÅ ±2kÅ
SUBSTRATE POTENTIAL (POWERED UP):
V-
Metallization Mask Layout
BAL1
HA-5135
PASSIVATION:
Type: Nitride (Si3N4) over Silox (SiO2, 5% Phos.)
Silox Thickness: 12kÅ ±2kÅ
Nitride Thickness: 3.5kÅ ±1.5kÅ
TRANSISTOR COUNT:
71
PROCESS:
Bipolar Dielectric Isolation
HA-5135O
V+
OUT
BAL1
BAL2
-IN +IN
V-
9
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