B1495 查看數據表（PDF） - SavantIC Semiconductor
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B1495 Datasheet PDF : 3 Pages
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SavantIC Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-10mA; IB=0
VCEsat Collector-emitter saturation voltage IC=-1.5A ; IB=-1.5mA
VBEsat Base-emitter saturation voltage
IC=-1.5A ; IB=-1.5mA
ICBO
Collector cut-off current
VCB=-100V;IE=0
IEBO
hFE-1
Emitter cut-off current
DC current gain
VEB=-8V;IC=0
IC=-1A ; VCE=-2V
hFE-2
DC current gain
IC=-2A ; VCE=-2V
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IB1=-IB2=-1.5mA
VCC?-30V ,RL=20A
Product Specification
2SB1495
MIN TYP. MAX UNIT
-100
V
-1.5
V
-2.0
V
-10
µA
-4.0 mA
2000
2000
0.5
µs
1.0
µs
0.4
µs
2
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