2SB1478 查看數據表（PDF） - Inchange Semiconductor

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2SB1478

Silicon PNP Darlington Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Darlington Power Transistor

isc Product Specification

2SB1478

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA, IB= 0

V(BR)CBO Collector-Base Breakdown Voltage

IC= -50μA; IE=0

V(BR)EBO Emitter-Base Breakdown Voltage

IE= -2mA; IC=0

VCE(sat) Collector-Emitter Saturation Voltage IC= -5A, IB=B -20mA

VBE(sat) Base-Emitter Saturation Voltage

IC= -5A, IB=B -20mA

ICBO

Collector Cutoff current

VCB= -100V, IE= 0

IEBO

Emitter Cutoff current

VEB= -5V, IC= 0

hFE

DC Current Gain

IC= -2A; VCE= -3V

MIN TYP. MAX UNIT

-100

V

-100

V

-5

V

-2.0

V

-2.5

V

-10

μA

-2

mA

2000

20000

isc Website：www.iscsemi.cn

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