2SB1478 查看數據表（PDF） - New Jersey Semiconductor
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2SB1478 Datasheet PDF : 2 Pages
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Silicon PNP Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage lc=-10mA, IB=0
V(BR)CBO Collector-Base Breakdown Voltage
lc=-50uA;lE=0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -2mA; lc=0
VcE(sat) Collector-Emitter Saturation Voltage IG= -5A,IB= -20mA
VBE(sat) Base-Emitter Saturation Voltage
lc= -5A, IB= -20mA
IcBO
Collector Cutoff current
VCB=-100V, IE=0
IEBO
Emitter Cutoff current
VEB= -5V, lc= 0
hFE
DC Current Gain
lc= -2A; VCE= -3V
2SB1478
MIN TYP. MAX UNIT
-100
V
-100
V
-5
V
-2.0
V
-2.5
V
-10
uA
-2
mA
2000
20000
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