B1495 查看數據表（PDF） - New Jersey Semiconductor
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B1495 Datasheet PDF : 2 Pages
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Silicon PNP Darlington Power Transistor
2SB1495
ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage lc=-10mA;ls=0
VcE(sat) Collector-Emitter Saturation Voltage IC=-1.5A;IB= -1.5mA
VeE(sat) Base-Emitter Saturation Voltage
IC=-1.5A;IB= -1.5mA
ICBO
Collector Cutoff Current
VCS=-100V; IE=0
IEBO
Emitter Cutoff Current
VEB= -8V; lc= 0
hpE-1 DC Current Gain
|C=_1A;VCE=-2V
hpE-2
DC Current Gain
lc= -2A; VOE= -2V
Switching Times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
lc=-1.5A,lBi=-lB2= -1.5mA,
VCc= -30V;RL= 200
MIN TYP. MAX UNIT
-100
V
-1.5
V
-2.0
V
-10
uA
-4.0 mA
2000
2000
0.5
V- S
1.0
us
0.4
us
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